期刊


ISSN1555-130X
刊名Journal of Nanoelectronics and Optoelectronics
参考译名纳米电子与光电子杂志
收藏年代2006～2024



全部

2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2010, vol.5, no.1 2010, vol.5, no.2 2010, vol.5, no.3

题名作者出版年年卷期
Modeling Based Design of Graphene Heat Spreaders and Interconnects in 3-D Integrated CircuitsSamia Subrina20102010, vol.5, no.3
A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping ProfileSarvesh Dubey; Pramod Kumar Tiwari; S. Jit20102010, vol.5, no.3
Modeling and Estimation of Band to Band Tunneling Current for Nanoscale Metal Gate (Hf/AlN_x) Symmetric Double Gate MOSFETS. K. Vishvakarma; V. Komal Kumar; A. K. Saxena; S. Dasgupta20102010, vol.5, no.3
Design and Simulation of a Sequence Generator using Single Electron Devices and Hybrid ArchitectureDebasis Samanta; Ankush Ghosh; Souvik Sarkar; Subir Kumar Sarkar20102010, vol.5, no.3
Nanofocusing of Surface Plasmons at the Apex of Metallic Probe TipsAndrey Petrin20102010, vol.5, no.3
Performance Analysis of a Single-Electron Winner-Take-All Fully-Interconnected NetworkJanaina Goncalves Guimaraes; Jose Camargo da Costa20102010, vol.5, no.3
Preparation and Characteristics of Flexible Nanorod-Based PhotodetectorsL. W. Ji; C. Z. Wu; T. H. Fang; S. M. Peng; S. J. Young; W. Water; T. H. Meen; C. H. Liu20102010, vol.5, no.3
Synthesis of Nano-Structured Sb_2Te_3 Thin Films by Stacked Elemental Layer MethodS. Shanmugan; D. Mutharasu20102010, vol.5, no.3
Impact of Gate Engineering on Gate Leakage Behavior of Nano Scale MOSFETs with High-k DielectricsAshwani K. Rana; Narottam Chand; Vinod Kapoor20102010, vol.5, no.3
High Frequency Transport of Two-Dimensional Hot Electrons in CdS Quantum Well with Inserted Barrier LayerSanjoy Deb; N. Basanta Singh; Asish Kumar De; S. K. Sarkar20102010, vol.5, no.3
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