期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2024



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2009, vol.38, no.1 2009, vol.38, no.2 2009, vol.38, no.3 2009, vol.38, no.4 2009, vol.38, no.5 2009, vol.38, no.6

题名作者出版年年卷期
The Use of Stressed Silicon in MOS Transistors and CMOS StructuresI. G. Neizvestnyi; V. A. Gridchin20092009, vol.38, no.2
Electrical Properties of InAs-SiO{sub}2-In{sub}2O{sub}3 MIS Structures with a Modified InterfaceN. A. Valisheva; A. A. Guzev; A. P. Kovchavtsev; G. L. Kuryshev; T. A. Levtsova; Z. V. Panova20092009, vol.38, no.2
Emission Tomography of Plasma in Technological Reactors of MicroelectronicsA. V. Fadeev; K. V. Rudenko; V. F. Lukichev; A. A. Orlikovskii20092009, vol.38, no.2
Clean Boxes with Artificial Climate for Atomic Force Microscopy: New Possibilities for Diagnostics of Nanodimensional ObjectsA. L. Tolstikhina; R. V. Gainutdinov; M. L. Zanaveskin; K. L. Sorokina; N. V. Belugina; Yu. V. Grishchenko; V. D. Shestakov20092009, vol.38, no.2
Ge-Nanocluster Formation in Ge-Doped Polysilicon Films under Oxidation and Heat TreatmentA. A. Kovalevsky; A. S. Strogova; D. V. Plyakin20092009, vol.38, no.2
Samarium-Atom Adsorption and Desorption on IridiumA. K. Orudzhov; A. O. Dashdemirov; A. K. Elchieva20092009, vol.38, no.2
Nonholonomic Control in Quantum Computers Based on Ions in a TrapA. S. Burkov20092009, vol.38, no.2
Influence of Noise Parameters of Integral Operational Amplifiers and Voltage Comparators and Their Nonlinear Distortions on Presentation Accuracy of Signals Being ProcessedT. M. Agakhanyan20092009, vol.38, no.2



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